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| inchange semiconductor product specification silicon npn power transistors 2SD1562 2SD1562a description ? ? with to-220c package ? complement to type 2sb1085/1085a ? high transition frequency applications ? for low freuqency power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit 2SD1562 120 v cbo collector-base voltage 2SD1562a open emitter 160 v 2SD1562 120 v ceo collector-emitter voltage 2SD1562a open base 160 v v ebo emitter-base voltage open collector 5 v i c collector current 1.5 a i cm collector current-peak 3.0 a t c =25 ?? 20 p c collector power dissipation t a =25 ?? 1.5 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SD1562 2SD1562a characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2SD1562 120 v (br)ceo collector-emitter breakdown voltage 2SD1562a i c =1ma; i b =0 160 v 2SD1562 120 v (br)cbo collector-base breakdown voltage 2SD1562a i c =50 | a; i e =0 160 v v (br)ebo emitter-base breakdown voltage i e =50 | a; i c =0 5 v v cesat collector-emitter saturation voltage i c =1 a;i b =0.1 a 2.0 v v besat base-emitter on saturation voltage i c =1 a;i b =0.1 a 1.5 v i cbo collector cut-off current v cb =120v; i e =0 1.0 | a i ebo emitter cut-off current v eb =4v; i c =0 1.0 | a 2SD1562 60 320 h fe dc current gain 2SD1562a i c =0.1a ; v ce =5v 60 200 f t transition frequency i e =-0.1a ; v ce =5v 80 mhz c ob output capacitance i e =0 ; v cb =10v;f=1mhz 20 pf ? h fe classifications type d e f 2SD1562 60-120 100-200 160-320 2SD1562a 60-120 100-200 inchange semiconductor product specification 3 silicon npn power transistors 2SD1562 2SD1562a package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
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